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GaN Devices in Power Electronics, Space Missions, and Quantum Photonics

Nov 12

Tuesday, November 12, 2019 - 12:00pm to 1:00pm

Fitzpatrick Center Schiciano Auditorium Side B, room 1466

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Presenter

Yuji Zhao

Gallium nitride (GaN) based wide bandgap (WBG) materials are revolutionizing an increasing number of applications ranging from applied electronics such as LEDs and lasers, power electronics, RF and power ICs, to quantum information such as quantum photonics and quantum sensing. For example, GaN WBG devices are presently making a significant impact on power electronic devices technologies, which are vital for electric vehicles, data centers, and smart grids. The new power devices based on GaN are expected to outperform the current Si power devices, with promises to trim the losses in power conversion circuits, trip the size, weight and cost of power systems, and overall, drive a 10 percent reduction in global power consumption. At the heart of all these exciting applications is the WBG materials, the unique electronic and optical properties of which have enabled and will continue to enable new paradigms in electronic and photonic technologies. In this talk, I will review our progress on GaN materials research, and discuss their applications in kV-class power transistors, high temperature memory and ICs for space missions, and integrated photonics for quantum information and biomedical sensing applications. Additionally, I will also discuss the research challenges and opportunities of emerging ultra-wide bandgap (UWBG) materials, including Ga2O3, diamond, and AlN, which represent the next frontier in electronic and optical materials.

Contact

Dina Khalilova
dk246@duke.edu