Magnetic Memory: Laying the Foundations for Modern AI
Yiran Chen and Helen Li have won the A. Richard Newton Technical Impact Award for their foundational research on magnetic random access memory (MRAM).
Explore the honors and awards won by our faculty, a scholarly community that defines excellence in engineering education, research and societal impact.
Yiran Chen and Helen Li have won the A. Richard Newton Technical Impact Award for their foundational research on magnetic random access memory (MRAM).
A group of Duke undergraduates, doctoral students, postdoctoral researchers and faculty members spanning several years were recognized along with national collaborators for their work to develop novel semiconductor materials that can control spin, charge and light.
Award-winning publication provides a blueprint for chip design companies to train machine learning models that help detect lithography hotspot patterns in IC layouts before fabrication while protecting proprietary layout data.