FIP Seminar Series - Dr. Sanjay Krishna "Antimonide Materials and Devices for 4th Generation Infrared Detectors and Imagers"
Wednesday, September 23, 2015
12:00 pm - 1:00 pm
Hudson Hall 208
Dr. Sanjay Krishna
"Antimonide Materials and Devices for 4th Generation Infrared Detectors and Imagers" Dr. Sanjay Krishna Director, Center for High Technology Materials Professor and Regents¿ Lecturer, Department of Electrical and Computer Engineering University of New Mexico, Albuquerque NM Infrared imaging (3-25¿m) has been an important technological tool for the past sixty years since the first report of infrared detectors in 1950s. There has been a dramatic progress in the development of infrared antimonide based detectors in the past decade with new materials like InAsSb, InAs/GaSb superlattices and InAs/InAsSb superlattices demonstrating very good performance. One of the unique aspects of the 6.1A family of semiconductors (InAs, GaSb and AlSb) is the ability to engineer the bandstructure to obtain designer band-offsets. Our group has been involved with the vision of the 4th generation of infrared detectors and is one of two university laboratories in the country that can undertake ¿Design to Camera¿ research and realize focal plane arrays. Sanjay Krishna is the Director of the Center for High Technology Materials and Professor and Regents in the Department of Electrical and Computer Engineering at the University of New Mexico. Sanjay received his M.S. from IIT, Madras, MS in Electrical Engineering in 1999 and PhD in Applied Physics in 2001 from the University of Michigan. He joined UNM as a tenure track faculty member in 2001.